Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN-Reference-Cited by-同舟云学术

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Published:2014-12-01 Issue:22 Volume:105 Page:222101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bryan Zachary¹,Bryan Isaac¹,Gaddy Benjamin E.¹,Reddy Pramod¹^ORCID,Hussey Lindsay¹,Bobea Milena¹,Guo Wei¹^ORCID,Hoffmann Marc¹,Kirste Ronny¹,Tweedie James¹,Gerhold Michael²,Irving Douglas L.¹,Sitar Zlatko¹,Collazo Ramón¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

2. Engineering Science Directorate, Army Research Office, P.O. Box 12211, Research Triangle Park, North Carolina 27703, USA

Funder

National Science Foundation

Army Research Office

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/1.4903058

Reference21 articles.

1. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

2. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

3. Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys

4. Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

5. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)

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