Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126120
Reference9 articles.
1. Nonequilibrium characteristics of the gate‐controlled diode in 6H‐SiC
2. Electrical properties of thermal oxide grown using dry oxidation onp‐type 6H‐silicon carbide
3. Infrared spectroscopy of hydrides on the 6H-SiC surface
4. Si-H Bonds on the 6H-SiC(0001) Surface after $\bf H_{2}$ Annealing
5. 4H-SiC MOSFETs utilizing the H2 surface cleaning technique
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2. Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO2 interface: An ab initio study;Surface Science;2022-09
3. Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces;Japanese Journal of Applied Physics;2022-03-25
4. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19
5. NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability;IEEE Transactions on Electron Devices;2019-11
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