Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA
2. Ness Engineering, Inc., P.O. Box 261501, San Diego, California 92196, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5013248
Reference48 articles.
1. Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low‐temperature GaAs for optoelectronic applications
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3. Supralinear photoconductivity of copper doped semi‐insulating gallium arsenide
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