Impurity aggregation at individual dislocations in GaAs observed by means of a simultaneous electron beam induced current and cathodoluminescence technique-Reference-Cited by-同舟云学术

Impurity aggregation at individual dislocations in GaAs observed by means of a simultaneous electron beam induced current and cathodoluminescence technique

Published:1989-06-26 Issue:26 Volume:54 Page:2659-2661
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Eckstein M.,Jakubowicz A.,Bode M.,Habermeier H.‐U.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.101027

Reference12 articles.

1. On the theory of electron‐beam‐induced current contrast from pointlike defects in semiconductors

2. Theory of cathodoluminescence contrast from localized defects in semiconductors

3. States of copper during diffusion in semi‐insulating GaAs

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1. Impact of resistance on cathodoluminescence and its application for layer sheet-resistance measurements;Applied Physics Letters;2008-07-28

2. Interaction of Copper with Dislocations in GaAs;Journal de Physique III;1997-07

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4. Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes;Journal of Electronic Materials;1994-04

5. Temperature dependent electron‐beam‐induced‐current investigation of electronic damages in silicon due to reactive ion etching;Journal of Applied Physics;1994-01-15