Understanding tunneling electroresistance effect through potential profile in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory
Author:
Affiliation:
1. Department of Nano-Optical engineering, Korea Polytechnic University, Siheung 15073, South Korea
2. Department of Material Science and Chemical Engineering, Hanyang University, Ansan 15588, South Korea
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5119948
Reference31 articles.
1. Solid-state memories based on ferroelectric tunnel junctions
2. Ferroelectric tunnel junctions for information storage and processing
3. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
4. Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
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