High-contrast, highly textured VO2thin films integrated on silicon substrates using annealed Al2O3buffer layers-Reference-Cited by-同舟云学术

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High-contrast, highly textured VO2thin films integrated on silicon substrates using annealed Al2O3buffer layers

Published:2020-05-29 Issue:20 Volume:127 Page:205303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lust Mark¹^ORCID,Chen Shangyi¹²^ORCID,Wilson Catrina E.³^ORCID,Argo Joshua³,Doan-Nguyen Vicky²³^ORCID,Ghalichechian Nima¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43212, USA

2. Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43212, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43212, USA

Funder

National Science Foundation

Air Force Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5144816

Reference40 articles.

1. Broadband Reflective Optical Limiter Using GST Phase Change Material

2. Recent advances in fabrication strategies, phase transition modulation, and advanced applications of vanadium dioxide

3. Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates

4. Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates

5. rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition

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4. Effect of structural disorder on the modification of V–V and V–O bond lengths at the metal-dielectric phase transition in VO2 thin films;Materials Science in Semiconductor Processing;2024-05

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