Observation of increased photoluminescence decay time in strain‐induced quantum‐well dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108684
Reference18 articles.
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4. Optical measurement of surface recombination in InGaAs quantum well mesa structures
5. Time resolved spectroscopy on etched GaAs/GaAlAs-quantum-microstructures
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2. Optical Study of Strain-Induced GaAs Quantum Dots;Japanese Journal of Applied Physics;2001-03-30
3. Effect of growth interruption on the optical properties of InAs/GaAs quantum dots;Solid State Communications;1999-02
4. EXCITON DYNAMICS IN SELF-ORGANIZED InAs/GaAs QUANTUM DOTS;Acta Physica Sinica;1999
5. Step pseudomorphic asymmetric wells: an optical study in the framework of III - V strain-induced sub-two-dimensional quantum systems;Semiconductor Science and Technology;1997-09-01
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