Effects of oxygen‐argon mixing on the electrical and physical properties of ZrTiO4films sputtered on silicon at low temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360418
Reference10 articles.
1. Structural and electrical characteristics of metal‐insulator‐semiconductor diodes based on Y2O3dielectric thin films on silicon
2. Crystal Structure of ZrTiO4
3. Growth of highly oriented ZrTiO4thin films by radio‐frequency magnetron sputtering
4. Dependence between optical and chemical properties of Y2O3and ZrO2thin films produced by ion beam sputtering
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1. Dielectric based energy storage capacity of sol-gel synthesized Sr-doped ZrTiO4 nanocrystallites;Ceramics International;2018-04
2. Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors;Japanese Journal of Applied Physics;2011-06-20
3. Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors;Japanese Journal of Applied Physics;2011-06-01
4. Electronic structure of ZrTiO4 and HfTiO4: Self-consistent cluster calculations and X-ray spectroscopy studies;Journal of Physics and Chemistry of Solids;2011-02
5. Effect of annealing temperatures on microstructure of (Zr0.8Sn0.2)TiO4 thin films grown by a sol–gel process;Journal of Alloys and Compounds;2009-03
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