Crystallization of sputtered-deposited and ion implanted amorphous Ge2Sb2Te5 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3148288
Reference28 articles.
1. Phase-change materials for rewriteable data storage
2. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
3. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases
4. Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5Films
5. Separate domain formation in Ge2Sb2Te5–SiOx mixed layer
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1. Density of amorphous sputtered Ge2Sb2Te5 thin films;AIP Advances;2023-01-01
2. Recent advances in doped Ge2Sb2Te5 thin film based phase change memories;Materials Advances;2023
3. Measuring Techniques for the Semiconductor’s Parameters;Springer Handbook of Semiconductor Devices;2022-11-11
4. Ion beam irradiation of phase change materials: A route to material properties investigation and engineering;Materials Science in Semiconductor Processing;2021-11
5. Fast recovery of ion-irradiation-induced defects in Ge2Sb2Te5 thin films at room temperature;Optical Materials Express;2021-09-27
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