Electrical and structural properties of shallowp+junctions formed by dual (Ga/B) ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102515
Reference9 articles.
1. Dual ion implantation technique for formation of shallowp+/njunctions in silicon
2. Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing
3. Sub‐100‐nmp+‐nshallow junctions fabricated by group III dual ion implantation and rapid thermal annealing
4. Shallowp+junction formation by a reverse‐type dopant preamorphization scheme
5. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Computer simulation studies of low energy B implantation into amorphous and crystalline silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-10
2. Shallow boron junctions and preamorphization for deep submicron silicon technology;Journal of Applied Physics;1993-04-15
3. Ultra low energy (100–2000 eV) boron implantation into crystalline and silicon-preamorphized silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
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