Author:
Kersten Friederike,Lantzsch Ronny,Buschmann Nora,Neumann Yvonne,Petter Kai,Kauert Maximilian,Stenzel Florian,Fertig Fabian,Schönmann Antje,Faulwetter-Quandt Björn,Duncker Klaus,Kim Kyunghun,Jarzembowski Enrico,Junghänel Matthias,Weihrauch Anika,Wasmer Sven,Reiche Björn,Klenke Christian,Lee Benjamin,Frühauf Felix,Höger Ingmar,Schaper Martin,Müller Jörg W.,Jeong Daniel J. W.
Reference12 articles.
1. International Technology Roadmap for Photovoltaic (ITRPV), 2020 Results, Twelfth Edition, March 2021.
2. A. Metz, T. Abe and R. Hezel, “Gallium-doped Czochralski grown silicon: A novel promising material for the PV-Industry”, Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, United Kingdom (James & James, London), 2000, p. 1189.
3. S. Rein, T. Rehrl, W. Warta, S. W. Glunz and G. Willeke, “Electrical and thermal properties of the metastable defect in boron-doped Czochralski silicon (Cz-Si)”, Proceedings of the 17th European Photovoltaic Solar Energy Conference, Munich, Germany, 2001, pp. 1555–1560.
4. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
5. Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献