Generation of deep levels in silicon under posthydrogen‐plasma thermal anneal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358691
Reference12 articles.
1. Investigation of room‐temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal‐oxide‐silicon structures
2. Effective removal of oxygen from Si layer on buried oxide by implantation of hydrogen
3. Hydrogen in crystalline semiconductors
4. Necessity of hydrogen for activation of implanted fluorine in Si/SiO2structures
5. Hydrogen‐accelerated thermal donor formation in Czochralski silicon
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