Low resistance ohmic contacts on nitrogen ion bombarded InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112750
Reference23 articles.
1. Low resistance ohmic contacts to n- and p-InP
2. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
3. Compound semiconductor contact metallurgy
4. A nonalloyed, low specific resistance Ohmic contact to n-InP
5. Alloyed tin-gold ohmic contacts to n-type indium phosphide
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1. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data;Journal of Applied Physics;2013-10-21
2. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
3. InP/InGaAs heterojunction bipolar transistors with low-resistance contact on heavily doped InP emitter layer;Applied Physics Letters;2004-04-12
4. Characterization of damage in InP dry etched using nitrogen containing chemistries;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
5. Damage of InP (110) induced by low energy Ar[sup +] and He[sup +] bombardment;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000
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