A nonalloyed, low specific resistance Ohmic contact to n-InP
-
Published:1984
Issue:4
Volume:2
Page:620
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:en
-
Short-container-title:J. Vac. Sci. Technol. B
Author:
Dautremont-Smith W. C.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
33 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current-voltage characteristics of Ag/TiO2/n-InP/Au Schottky barrier diodes;Journal of Applied Physics;2019-01-21
2. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-07
3. Characterization of damage in InP dry etched using nitrogen containing chemistries;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Effect of the first antimony layer on AuZn ohmic contacts to p-type InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
5. A survey of ohmic contacts to III-V compound semiconductors;Thin Solid Films;1997-10