Characteristics and mechanism of 1/fnoise in GaAs Schottky barrier field‐effect transistors

Author:

Folkes P. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. An online FT-ICR Penning-trap mass spectrometer for the DPS2-F section of the KATRIN experiment;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-09

2. Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/f Noise Measurements;Radiophysics and Quantum Electronics;2005-03

3. Characterization of flicker noise in GaAs MESFET's for oscillator applications;IEEE Transactions on Microwave Theory and Techniques;2000

4. Correlation between fluctuating conductivity of the channel, transconductance dispersion and noise of a MESFET;Journal of Physics D: Applied Physics;1997-09-21

5. Voltage dependence of trap-generated noise in MESFETs;Solid-State Electronics;1993-03

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