Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/f Noise Measurements-Reference-Cited by-同舟云学术

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Testing of Quasi-Ballistic Field-Effect Transistors with Schottky Gate by 1/f Noise Measurements

Published:2005-03 Issue:3 Volume:48 Page:240-245
ISSN:0033-8443
Container-title:Radiophysics and Quantum Electronics
language:en
Short-container-title:Radiophys Quantum Electron

Author:

Belyakov A. V.,Moryashin A. V.,Perov M. Yu.,Yakimov A. V.,Vandamme L. K. J.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Astronomy and Astrophysics,Nuclear and High Energy Physics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11141-005-0064-z.pdf

Reference10 articles.

1. Yu. S. Karpov, Radiotekh. Elektron., 14, No.4, 742 (1969).

2. P. A. Folkes, Appl. Phys. Lett., 48, 344 (1986).

3. M. J. Kirton and M. J. Uren, Physics, 38, No.4, 367 (1988).

4. L. K. J. Vandamme, Li Xiaosong, and D. Rigaud, in: Conf. Proc. 285: Noise in Physical Systems and 1/f Fluctuations, St. Louis, 1993, p. 345.

5. L. K. J. Vandamme, IEEE Trans. Electron. Devices., 41, No.11, 2176 (1994).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Natural ageing effects of Schottky-gate GaAs FETs in current-voltage characteristics and in 1/f noise spectrum;Radiophysics and Quantum Electronics;2007-02

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