Orientation of the electric‐field gradient arising from a vacancy in Hg0.79Cd0.21Te
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354331
Reference24 articles.
1. Electrical doping of HgCdTe by ion implantation and heat treatment
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3. The doping of mercury cadmium telluride grown by molecular‐beam epitaxy
4. Mixed-valence self-compensation in In-doped CdxHg1-xTe
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1. Perturbed-angular-correlation studies of In-vacancy pairs in Hg1−xCdxTe;Journal of Applied Physics;1999-10
2. Palladium as impurity in ZnTe;Journal of Crystal Growth;1996-04
3. Complex formation at indium donors in p-CdTe;Journal of Crystal Growth;1996-02
4. Palladium as impurity in ZnTe;Selected Topics in Group IV and II–VI Semiconductors;1996
5. Reassessment of the assignment of the InM2+3+VM2+defect in CdTe and ternary II‐VI compounds;Journal of Applied Physics;1995-08
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