Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks-Reference-Cited by-同舟云学术

Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks

Published:2009-03 Issue:5 Volume:105 Page:054305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Alizadeh Azar,Hays David,Taylor Seth T.,Keimel Chris,Conway Ken R.,Denault Lauraine,Krishnan Kasiraman,Watkins Vicki H.,Neander Rosalyn,Brown Jay S.,Stintz Andreas,Krishna Sanjay,Blumin Marina,Saveliev Igor,Ruda Harry E.,Braunstein Edit,Jones Colin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3082494

Reference34 articles.

1. Special Issue on Optoelectronic Devices Based on Quantum Dots

2. Handbook of Photovoltaic Science and Engineering

3. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime

4. Excited states and energy relaxation in stacked InAs/GaAs quantum dots

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