Molecular mechanisms for disilane chemisorption on Si(100)-(2×1)
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089623
Reference47 articles.
1. The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures
2. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
3. Interaction ofSi2H6with a Si(111)-77 surface
4. Decomposition mechanisms of SiHx species on Si(100)‐(2×1) for x=2, 3, and 4
5. Silane gas-source atomic layer epitaxy
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1. Adsorption Behaviors of Chlorosilanes, HCl, and H2 on the Si(100) Surface: A First-Principles Study;ACS Omega;2022-11-10
2. Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides;Semiconductors;2019-07
3. Computational Study for Reactions of H Atoms with Adsorbed SiH3 and Si2H5 on H-Covered Si(100)-(2 × 1) Surface;The Journal of Physical Chemistry C;2014-08-22
4. Kinetics of the decomposition of disilane molecules on a silicon growth surface in vacuum chemical epitaxy;Russian Journal of Physical Chemistry B;2013-05
5. Kinetics of disilane molecule decomposition on the growth surface of silicon in vacuum gas-phase epitaxy reactors;Technical Physics;2012-11
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