Electrical behavior of memory devices based on fluorene-containing organic thin films-Reference-Cited by-同舟云学术

Electrical behavior of memory devices based on fluorene-containing organic thin films

Published:2008-08-15 Issue:4 Volume:104 Page:044510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dimitrakis Panagiotis,Normand Pascal,Tsoukalas Dimitris,Pearson Christopher,Ahn Jin H.,Mabrook Mohammed F.,Zeze Dagou A.,Petty Michael C.,Kamtekar Kiran T.,Wang Changsheng,Bryce Martin R.,Green Mark

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2968551

Reference29 articles.

1. Emerging memory devices

2. Nonvolatile Memory Elements Based on Organic Materials

3. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

4. Mechanism for bistability in organic memory elements

5. Organic Materials and Thin-Film Structures for Cross-Point Memory Cells Based on Trapping in Metallic Nanoparticles

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