Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence-Reference-Cited by-同舟云学术

Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Published:2015-12 Issue:12 Volume:5 Page:127104
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Peng¹²,Pan Wenwu¹²,Wang Kai¹³,Wu Xiaoyan¹²^ORCID,Yue Li¹,Gong Qian¹,Wang Shumin¹⁴

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 200050, China

2. School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China

3. National Laboratory for Infrared Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China

4. Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden

Funder

"strategic priority research program" of the Chinese academy of sciences

creative research group project of natural science foundation of China

key program of natural science foundation of china

national basic research program of china

the foundation of national laboratory for infrared physics, the key research program of the chinese academy of sciences

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937412

Reference21 articles.

1. Giant Spin-Orbit Bowing inGaAs1−xBix

2. Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs

3. Growth and properties of GaSbBi alloys

4. Modeling Bi-induced changes in the electronic structure of GaAs1−xBixalloys

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4. Anomalous increase of sub-band gap photoluminescence from InPBi layers grown by liquid phase epitaxy;Materials Research Express;2019-05-03

5. Dilute Bismuthides on InP Substrates: From Materials to Devices;Bismuth-Containing Alloys and Nanostructures;2019