Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1812376
Reference20 articles.
1. Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN
2. Power performance and scalability of AlGaN/GaN power MODFETs
3. Large-signal microwave performance of GaN-based NDR diode oscillators
4. Modulated-impurity-concentration transferred-electron devices exhibiting large harmonic frequency content
5. Relation between the domain dynamics and the shape of the cathode “notch” in a Gunn diode
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1. The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode;physica status solidi (a);2015-12-07
2. The modulation of multi-domain and harmonic wave in a GaN planar Gunn diode by recess layer;Semiconductor Science and Technology;2015-12-03
3. Differentiated Doping Profile for Vertical Terahertz GaN Transferred-Electron Devices;IEEE Transactions on Electron Devices;2015-03
4. Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact;Journal of Applied Physics;2014-09-07
5. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes;Journal of Applied Physics;2014-01-28
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