Electronic structure of δ-Ta2O5 with oxygen vacancy: ab initio calculations and comparison with experiment-Reference-Cited by-同舟云学术

Electronic structure of δ-Ta2O5 with oxygen vacancy: ab initio calculations and comparison with experiment

Published:2011-07-15 Issue:2 Volume:110 Page:024115
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ivanov Maxim V.,Perevalov Timofey V.,Aliev Vladimir S.,Gritsenko Vladimir A.,Kaichev Vasily V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3606416

Reference38 articles.

1. Optical properties of reactively sputtered Ta2O5 films

2. Y. Ohji, S. Ijima, A. Saito, H. Miki et al., Extended Abstracts of 37th Annual International Reliability Physics Symposium (IRPS, San Diego, 1999), p. 12.

3. Some properties of crystallized tantalum pentoxide thin films on silicon

4. Hexagonal polymorph of tantalum–pentoxide with enhanced dielectric constant

5. Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications

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