New mechanism for diffusion of ion‐implanted boron in Si at high concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100850
Reference8 articles.
1. High concentration effects of ion implanted boron in silicon
2. A review of some charge transport properties of silicon
3. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
4. Boron diffusion in silicon
5. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
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1. Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor;Russian Microelectronics;2014-07
2. Phenomenological model of the diffusion of impurity atoms in ultrathin silicon layers with a nonuniform distribution of temperatures;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2009-08
3. Features of evolution of implanted profiles during RTA in non-isothermal reactor;SPIE Proceedings;2008-03-03
4. Dopants;Computational Microelectronics;2004
5. Methods of defect-engineering shallow junctions formed by B+-implantation in Si;Journal of Electronic Materials;1997-11
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