Transition metal contacts to graphene-Reference-Cited by-同舟云学术

Transition metal contacts to graphene

Published:2015-10-12 Issue:15 Volume:107 Page:153104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Politou Maria¹²^ORCID,Asselberghs Inge²,Radu Iuliana²,Conard Thierry²,Richard Olivier²,Lee Chang Seung³,Martens Koen²,Sayan Safak²⁴,Huyghebaert Cedric²,Tokei Zsolt²,De Gendt Stefan¹²,Heyns Marc¹²

Affiliation:

1. KU Leuven, 3001 Leuven, Belgium

2. imec, Kapeldreef 75, 3001 Leuven, Belgium

3. SAIT, Samsung Electronics Co., Suwon 443-803, South Korea

4. Intel Corporation, 2200 Mission College Blvd, Santa Clara, California 95054, USA

Funder

imec Industrial Affiliation Program

Fonds Wetenschappelijk Onderzoek (FWO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4933192

Reference42 articles.

1. The origins and limits of metal–graphene junction resistance

2. Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

3. Low contact resistance metals for graphene based devices

4. Contact resistance in top-gated graphene field-effect transistors

5. Contact resistance in few and multilayer graphene devices

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