Author:
Baghani Erfan,O'Leary Stephen K.
Subject
General Physics and Astronomy
Reference27 articles.
1. GaN, AlN, and InN: A review
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. Progress and prospects of group-III nitride semiconductors
4. GaN: Processing, defects, and devices
5. W. R. L. Lambrecht and B. Segall, in Properties of Group III Nitrides, EMIS Datareviews Series No. 11, edited by J. H. Edgar (INSPEC, London, 1994), Chap. 4, p. 141.
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