Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction-Reference-Cited by-同舟云学术

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Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction

Published:2016-07-11 Issue:2 Volume:109 Page:023502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Xianjie¹,Zhao Xiaofeng¹,Hu Chang¹,Zhang Yang¹,Song Bingqian¹,Zhang Lingli¹,Liu Weilong¹,Lv Zhe¹,Zhang Yu¹,Tang Jinke²,Sui Yu¹,Song Bo¹³

Affiliation:

1. Department of Physics, Harbin Institute of Technology, Harbin 150001, China

2. Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, USA

3. Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4955480

Reference31 articles.

1. A New Semiconductor Photocell Using Lateral Photoeffect

2. Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate

3. Photoelectronic and electronic properties of Ti/Si amorphous superlattices

4. Dember effect induced photovoltage in perovskite p-n heterojunctions

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