Superscrew dislocations in silicon carbide: Dissociation, aggregation, and formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2187011
Reference21 articles.
1. Performance limiting micropipe defects in silicon carbide wafers
2. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
3. Nondestructive defect characterization of SiC substrates and epilayers
4. Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC
5. Structural defects in α-SiC single crystals grown by the modified-Lely method
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1. Extended Defects in SiC: Selective Etching and Raman Study;Journal of Electronic Materials;2023-02-08
2. Removal behavior of micropipe in 4H-SiC during micromachining;Journal of Manufacturing Processes;2021-08
3. Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations;Japanese Journal of Applied Physics;2020-08-20
4. Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN;Journal of Crystal Growth;2019-07
5. Study of micropores in single crystals by in-line phase contrast imaging with synchrotron radiation;Physics-Uspekhi;2019-06-01
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