The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4884063
Reference22 articles.
1. Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
2. Silicon-Germanium Strained Layer Materials in Microelectronics
3. A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
4. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
5. Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
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1. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon;Nanomaterials;2022-02-22
2. Molecular dynamics study of release mechanism of stress at Si/Ge interface on a nanoscale;Acta Physica Sinica;2019
3. Molecular dynamics study of the effect of point defects on the stress at the Si/Ge interface;Applied Surface Science;2018-10
4. Effect of temperature on $$\mathbf{In}_{{\varvec{x}}} \mathbf{Ga}_{1-{{\varvec{x}}}} \mathbf{As}/\mathbf{GaAs}$$ In x Ga 1 - x As / GaAs quantum dots;Pramana;2017-07-12
5. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates;Nanotechnology;2017-02-09
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