Optical absorption characteristics in semi‐insulating GaAs crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96893
Reference9 articles.
1. EL2 and Related Defects in GaAs--Challenges and Pitfalls
2. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
3. Spectral distributions of photoquenching rate and multimetastable states for midgap electron traps (EL2 family) in GaAs
4. Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy
5. Photo-Electron Paramagnetic Resonance Study of AsGaAntisite Defect in As-Grown GaAs Crystals of Different Stoichiometry
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2. Infrared photoluminescence and optical absorption characteristics in Ge-doped ZnSe crystals;Applied Physics Letters;2000-04-17
3. The Nature of As-related Defects in Semi-Insulating GaAs Bulk Crystals;Crystal Research and Technology;1992
4. Thermostimulated Photoconductivity Method. Application to GaAs;Physica Status Solidi (a);1991-03-16
5. Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs;Semiconductor Science and Technology;1990-08-01
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