Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371789
Reference8 articles.
1. Thin film photodetectors grown epitaxially on silicon
2. Low‐temperature growth of Ge on Si(100)
3. Critical epitaxial thicknesses for low‐temperature (20–100 °C) Ge(001)2×1 growth by molecular‐beam epitaxy
4. Semiconductor molecular‐beam epitaxy at low temperatures
5. Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition
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3. Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn;Journal of Crystal Growth;2022-01
4. Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates;Japanese Journal of Applied Physics;2021-01-01
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