Atomic-level defect modulation and characterization methods in 2D materials-Reference-Cited by-同舟云学术

Atomic-level defect modulation and characterization methods in 2D materials

Published:2021-10-01 Issue:10 Volume:9 Page:100902
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Ngome Okello Odongo Francis¹,Yang Dong-Hwan¹,Chu Yu-Seong²,Yang Sejung²,Choi Si-Young¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk 790-784, South Korea

2. Division of Biomedical Engineering, College of Health Sciences, Yonsei University, Wonju 26493, South Korea

Funder

Global Frontier Hybrid Interface Materials

Korea Basic Science Institute

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0062633

Reference147 articles.

1. Silicon CMOS devices beyond scaling

2. Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis

3. The fundamental downscaling limit of field effect transistors

4. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

5. Electronics based on two-dimensional materials

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