Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy-Reference-Cited by-同舟云学术

Band-offset non-commutativity of GaAs/AlGaAs interfaces probed by internal photoemission spectroscopy

Published:2014-10-27 Issue:17 Volume:105 Page:171603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lao Yan-Feng¹,Unil Perera A. G.¹,Zhang Y. H.²,Wang T. M.²

Affiliation:

1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA

2. Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

Funder

National Science Foundation (NSF)

Army Research Office (ARO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901040

Reference19 articles.

1. GaAs and Related Materials

2. Band parameters for nitrogen-containing semiconductors

3. Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]

4. Theoretical study of band offsets at semiconductor interfaces

5. Commutativity and transitivity of GaAs-AlAs-Ge(100) band offsets

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