Surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613794
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1. Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency
2. fmax of 490 GHz metamorphic In0.52Al0.48As∕In0.53Ga0.47As HEMTs on GaAs substrate
3. Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures
4. A study of subbands in AlGaN/GaN high-electron-mobility transistor structures using low-temperature photoluminescence spectroscopy
5. Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures
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1. Contactless Method to Measure 2DEG Charge Density and Band Structure in HEMT Structures;IEEE Journal of the Electron Devices Society;2018
2. Surface properties of AlInGaN/GaN heterostructure;Materials Science in Semiconductor Processing;2016-11
3. Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy;Semiconductor Science and Technology;2014-01-30
4. Influence of adsorbed oxygen on the surface photovoltage and photoluminescence of ZnO nanorods;Nanotechnology;2006-03-28
5. Surface potential measurements on Ni–(Al)GaN lateral Schottky junction using scanning Kelvin probe microscopy;Applied Physics Letters;2006-01-09
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