Improved AlGaAs/GaAs double‐barrier resonant tunneling structures using two‐dimensional source electrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347385
Reference9 articles.
1. AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio
2. High performance resonant tunnelling structures on GaAs substrates
3. Al0.48In0.52As/Ga0.47In0.53As resonant tunnelling diodes with large current peak/valley ratio
4. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak‐to‐valley current ratios of 30 at room temperature
5. Magnetic field investigations of resonant tunnelling devices grown by MOCVD
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunneling under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor Heterostructures;High Pressure in Semiconductor Physics II;1998
2. The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition;Journal of Physics and Chemistry of Solids;1995-03
3. Doping-profile effects on the tunneling times of electrons confined in double-barrier heterostructures;Physical Review B;1994-10-15
4. Intrinsic and extrinsic effects on performance limitation of AlGaAs/GaAs double-barrier resonant tunneling structures;Solid-State Electronics;1992-05
5. Resonant tunneling via an accumulation layer;Physical Review B;1992-04-15
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