The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition-Reference-Cited by-同舟云学术

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

Published:1995-03 Issue:3-4 Volume:56 Page:475-479
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Smith J.M.,Klipstein P.C.,Austing D.G.,Grey R.,Hill G.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference18 articles.

1. Tunneling between two-dimensional electron gases

2. Hydrostatic pressure studies of an asymmetrically doped resonant tunneling diode

3. Resonant tunnelling between X-levels in a GaAs/AlAs/GaAs/AlAs/GaAs device above 13 kbar

5. Tunneling resonances at high pressure in double-barrier structures with AlAs barriers thicker than 50 Å

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3. Resonant tunneling between transverseXstates in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure;Physical Review B;1998-01-15

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5. New resonant tunneling processes between longitudinal and transverse X-states in GaAs/AlAs double barrier structures beyond the type II transition;Journal of Physics and Chemistry of Solids;1995-03