Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1946903
Reference7 articles.
1. Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators
2. Monolithic integration via a universal damage enhanced quantum-well intermixing technique
3. Photonic integrated circuits fabricated using ion implantation
4. The kinetics of intermixing of GaAs/AlGaAs quantum confined heterostructures
5. 0.98 mu m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber
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1. Composition and Interface Research on Quantum Well Intermixing Between a Tensile GaInP Quantum Well and Compressed AlGaInP Barriers;Journal of Electronic Materials;2022-06-07
2. Controllable red and blue bandgap energy shifted LEDs and modulators on InGaAsP quantum well platform;Integrated Optics: Devices, Materials, and Technologies XX;2016-03-01
3. Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration;Materials Research Express;2015-08-19
4. InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering;Solid-State Electronics;2013-11
5. Large energy band-gap tuning of 980nm InGaAs/InGaAsP quantum well structure via quantum well intermixing;Solid-State Electronics;2013-01
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