Defect kinetics and dopant activation in submicrosecond laser thermal processes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3268472
Reference18 articles.
1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon
2. A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
3. Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
4. Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
5. Advanced Thermal Processing of Ultrashallow Implanted Junctions Using Flash Lamp Annealing
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