Memristive artificial synapses based on Au–TiO2 composite thin film for neuromorphic computing

Author:

Zhu Haonan1234ORCID,Tang Zhenxun1234ORCID,Wang Guoliang2345ORCID,Fang Yuan2345ORCID,Huang Jijie2345ORCID,Zheng Yue1234ORCID

Affiliation:

1. School of Physics, Sun Yat-sen University 1 , Guangzhou 510275, China

2. Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Sun Yat-sen University 2 , Guangzhou 510275, China

3. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University 3 , Guangzhou 510275, China

4. Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University 4 , Guangzhou 510275, China

5. School of Materials, Shenzhen Campus of Sun Yat-sen University 5 , 518107 Shenzhen, China

Abstract

Neuromorphic computing architecture is considered to be a highly desirable next-generation computing architecture as it simulates the way the brain processes information. The basic device supporting such an architecture is called an artificial synapse, which possesses synapse-like functionalities. Here in this work, an Au–TiO2 composite thin film (Au nanoparticles embedding into TiO2 matrix) based memristive artificial synapse has been fabricated with excellent interface-type resistive switching (RS) characteristics. The conductivity of the device can be continuously tuned by applying different sequences of pulses, which could be analogous to the weight change of synapses. Various synaptic behaviors have been emulated, such as long-term potentiation/depression, short-term/long-term memory, learning-forgetting process, and paired-pulse facilitation. Finally, an artificial neural network for hand-written digits recognition has been constructed with an accuracy level as high as ∼90%. The excellent performance of the Au–TiO2 based device demonstrates the availability of incorporating the second phase to tune RS properties and shows its potential in a memristor for artificial synapses and neuromorphic computing with enhanced performance.

Funder

National Science Foundation of China

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices

Shenzhen Science and Technology Program

Guangdong Basic and Applied basic Research Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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