Free to bound transition‐related electroluminescence in 3C and 6H SiCp+–njunctions at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362974
Reference8 articles.
1. Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates
2. Hall effect and infrared absorption measurements on nitrogen donors in 6H‐silicon carbide
3. Electrical and optical characterization of SiC
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1. ZnO-based heterojunction light-emitting diodes on p-SiC(4H) grown by atomic layer deposition;Applied Physics B;2009-11-11
2. Structural and Optical Studies on Ion-implanted 6H–SiC Thin Films;Thin Solid Films;2008-06
3. Material defects in 4H-silicon carbide diodes;Journal of Applied Physics;2003-01
4. Forward characteristics of P+PN+ and P+NN+ diodes on 6H-SiC;Solid-State Electronics;2001-09
5. Micro-Raman and Photoluminescence Study on n-type 6H-SiC;Materials Science Forum;2001-01
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