Micro-Raman and Photoluminescence Study on n-type 6H-SiC-Reference-Cited by-同舟云学术

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Micro-Raman and Photoluminescence Study on n-type 6H-SiC

Published:2001-01 Issue: Volume:353-356 Page:345-348
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Feng Zhe Chuan¹,Chua S.J.²,Evans A.G.³,Steeds John W.⁴,Williams K.P.J.⁵,Pitt G.D.⁵

Affiliation:

1. National Taiwan University

2. National University of Singapore

3. Princeton University

4. University of Bristol

5. Renishaw plc

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.353-356.345.pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH3;Japanese Journal of Applied Physics;2005-01-24

2. Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by modeling and simulation;Computational Materials Science;2004-08

3. Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition;SiC Power Materials;2004

4. Spectroscopic Properties of Cubic SiC on Si;MRS Proceedings;2002

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