InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure-Reference-Cited by-同舟云学术

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InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure

Published:2019-02-04 Issue:5 Volume:114 Page:053509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nie Biying¹^ORCID,Huang Jianliang¹,Zhao Chengcheng¹,Huang Wenjun¹,Zhang Yanhua¹,Cao Yulian¹,Ma Wenquan¹^ORCID

Affiliation:

1. The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079923

Reference21 articles.

1. Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays

2. InAs/GaSb superlattices for advanced infrared focal plane arrays

3. Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm

4. Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

5. A high-performance long wavelength superlattice complementary barrier infrared detector

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1. Wet etch methods to achieve submicron active area self-aligned vertical Sb-heterostructure backward diodes;Materials Science in Semiconductor Processing;2024-03

2. Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy;Materials;2023-02-28

3. Single-Photon Counting with Semiconductor Resonant Tunneling Devices;Nanomaterials;2022-07-09

4. Atomic segregation effects on (AlxGa1-xAs)m/(GaAs)n superlattice structure;Micro and Nanostructures;2022-07

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