Reduction of low frequency magnetic noise by voltage-induced magnetic anisotropy modulation in tunneling magnetoresistance sensors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4894172
Reference17 articles.
1. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
3. Electric-field-assisted switching in magnetic tunnel junctions
4. Magnetic field sensing characteristics of MgO based tunneling magnetoresistance devices with Co40Fe40B20 and Co60Fe20B20 electrodes
5. Magnetic field sensor with voltage-tunable sensing properties
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