Magnetic field sensing characteristics of MgO based tunneling magnetoresistance devices with Co40Fe40B20 and Co60Fe20B20 electrodes-Reference-Cited by-同舟云学术

Magnetic field sensing characteristics of MgO based tunneling magnetoresistance devices with Co40Fe40B20 and Co60Fe20B20 electrodes

Published:2013-11 Issue: Volume:202 Page:64-68
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Wiśniowski P.,Dąbek M.,Cardoso S.,Freitas P.P.

Funder

National Science Centre

Associated Lab-Instituto de Nanotecnologias

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature;Ikeda;Applied Physics Letters,2008

2. Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: influence of annealing temperature;Scola;Applied Physics Letters,2007

3. Magnetic tunneling junction based magnetic field sensors: role of shape anisotropy versus free layer thickness;Shah;Journal of Applied Physics,2011

4. Magnetic tunnel junctions based on out-of-plane anisotropy free and in-plane pinned layer structures for magnetic field sensors;Wisniowski;IEEE Transaction on Magnetics,2012

5. Tunable linear magnetoresistance in MgO magnetic tunnel junction sensor using two pinned CoFeB electrodes;Chen;Applied Physics Letters,2012

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