Diffusion barrier properties of amorphous TiB2 for application in Cu metallization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1468904
Reference15 articles.
1. Copper-Based Metallization in ULSI Structures: Part II: Is Cu Ahead of Its Time as an On-Chip Interconnect Material?
2. Transition metals in silicon
3. Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide
4. Electrical characteristics of TiB/sub 2/ for ULSI applications
5. Stability of TiB2 as a Diffusion Barrier on Silicon
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement of Zr-N Diffusion Barrier Performance in Cu Metallization by Insertion of a Thin Zr Layer;Applied Mechanics and Materials;2013-08
2. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17
3. Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers;Applied Physics A;2011-04-14
4. Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum;Applied Surface Science;2009-05
5. TaNx thin films as copper barriers sputter-deposited at various NH3-to-Ar flow ratios;Microelectronic Engineering;2009-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3