Stability of TiB2 as a Diffusion Barrier on Silicon-Reference-Cited by-同舟云学术

Stability of TiB2 as a Diffusion Barrier on Silicon

Published:1991-10-01 Issue:10 Volume:138 Page:3062-3067
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Choi C. S.¹²³⁴,Ruggles G. A.¹²³⁴,Shah A. S.¹²³⁴,Xing G. C.¹²³⁴,Osburn C. M.¹²³⁴,Hunn J. D.¹²³⁴

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695

2. Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695

3. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, and Microelectronics Center of North Carolina, Research Triangle Park, North Carolina 27709

4. Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2085367/pdf

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