Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces-Reference-Cited by-同舟云学术

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

Published:1991-05-20 Issue:20 Volume:58 Page:2243-2245
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamada Masao,Wahi Anita K.,Meissner Paul L.,Herrera‐Gomez Alberto,Kendelewicz Tom,Spicer William E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104939

Reference15 articles.

1. The adsorption of Ga and Sb on cleaved InP surfaces

2. Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure

3. Abrupt interfaces on InP(110): Cases of Sb and Sn

4. Local order, epitaxy, and electronic structure of the Bi/III–V semiconductor interfaces

5. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)

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