The characteristic carrier–Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1586458
Reference22 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
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3. Electroluminescence of erbium-doped silicon
4. Excitation and nonradiative deexcitation processes ofEr3+in crystalline Si
5. Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions
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