Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)
Author:
Affiliation:
1. School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong 510006, China
2. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funder
National Basic Research Program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4943969
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1. Single-Layer Single-Crystalline SnSe Nanosheets
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5. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
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