Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1410324
Reference21 articles.
1. Very low resistance nonalloyed ohmic contacts to Sn-doped molecular-beam epitaxial GaAs
2. Electrical properties of molecular beam epitaxial GaAs layers grown at low temperature
3. Deep-level states and electrical properties of GaAs grown at 250 °C
4. Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems
5. Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric
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2. Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C;Applied Physics Letters;2009-04-06
3. Impact of the contact metallization on the performance of photoconductive THz antennas;Optics Express;2008-11-13
4. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
5. Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities;Optical and Quantum Electronics;2006-03
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